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| Datasheet File OCR Text: |
| Advanced Power MOSFET FEATURES s Avalanche Rugged Technology s Rugged Gate Oxide Technology s Lower Input Capacitance s Improved Gate Charge s Extended Safe Operating Area s 150 C Operating Temperature s Lower Leakage Current : 10 A (Max.) @ VDS = -150V s Lower RDS(ON) : 0.140 (Typ.) o SFH9154 BVDSS = -150 V RDS(on) = 0.2 ID = -18 A TO-3P 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds o o o Value -150 -18 -11.5 Units V A A V mJ A mJ V/ns W W/ C o -72 30 1215 -18 20.4 -5.0 204 1.63 - 55 to +150 o C 300 Thermal Resistance Symbol RJC RCS RJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.24 -Max. 0.61 -40 o Units C/W 1 SFH9154 Electrical Characteristics (TC=25 unless otherwise specified) Symbol BVDSS BV/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(Miller) Charge Min. Typ. Max. Units -150 --2.0 ------------------0.16 --------4.0 -100 100 -10 -100 A V V/ V nA P-CHANNEL POWER MOSFET Test Condition VGS=0V,ID=-250A ID=-250A VGS=-30V VGS=30V VDS=-150V VDS=-120V,TC=125 VGS=-10V,ID=-9.0A VDS=-40V,ID=-9.0A See Fig 7 VDS=-5V,ID=-250A 0.14 0.2 11 -- 2290 3000 400 600 200 300 20 40 80 40 20 40 45 90 170 90 --nC ns pF VGS=0V,VDS=-25V,f =1MHz See Fig 5 VDD=-75V,ID=-18A, RG=6.2 See Fig 13 100 130 VDS=-120V,VGS=-10V, ID=-18A See Fig 6 & Fig 12 Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units --------200 1.5 -18 -72 -5.0 --A V ns C Test Condition Integral reverse pn-diode in the MOSFET TJ=25,IS=-18A,VGS=0V TJ=25,IF=-18A diF/dt=100A/s Notes ; Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature L=5mH, IAS=-18A, VDD=-50V, RG=27, Starting TJ =25 ISD-18A, di/dt450A/s, VDDBVDSS , Starting TJ =25 Pulse Test : Pulse Width = 250s, Duty Cycle 2% Essentially Independent of Operating Temperature 2 P-CHANNEL POWER MOSFET Fig 1. Output Characteristics -VGS SFH9154 Fig 2. Transfer Characteristics 1 0 2 12 0 -ID , Drain Current [A] -ID , Drain Current [A] 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top : @Nts: oe 1 2 0 s P l e T s .5 us et 2 T = 2 oC .C 5 11 0 11 0 10 0 1 0 oC 5 2 oC 5 - 5 oC 5 @Nts: oe 1 V =0V . GS 2 V =4 V . DS 0 3 2 0 s P l e T s .5 us et 1 0 -1 0 1 0 10 0 11 0 1 -1 0 0 2 4 6 8 1 0 -VDS , Drain-Source Voltage [V] -VGS , Gate-Source Voltage [V] Fig 3. On-Resistance vs. Drain Current 02 .4 Fig 4. Source-Drain Diode Forward Voltage 12 0 RDS(on) , [ ] Drain-Source On-Resistance 02 .0 V =-0V 1 GS 01 .6 V =-0V 2 GS 01 .2 @ N t : T = 2 oC oe J 5 00 .8 0 1 5 3 0 4 5 6 0 7 5 9 0 -IDR , Reverse Drain Current [A] 11 0 10 0 1 0 oC 5 2 oC 5 1 0 -1 @Nts: oe 1 V =0V . GS us et 2 2 0 s P l e T s .5 15 . 20 . 25 . 30 . 35 . 40 . 45 . 05 . 10 . -ID , Drain Current [A] -VSD , Source-Drain Voltage [V] Fig 5. Capacitance vs. Drain-Source Voltage 50 00 C =C +C (C =sotd) iss gs gd ds h r e C =C +C oss ds gd C =C rss gd 1 5 Fig 6. Gate Charge vs. Gate-Source Voltage 40 00 C iss -VGS , Gate-Source Voltage [V] Capacitance [pF] V =-0V 3 DS 1 0 V =-5V 7 DS V =-2 V 10 DS 30 00 C oss 20 00 C rss 10 00 @Nts: oe 1 V =0V . GS 2 f=1Mz . H 5 @Nts:I = -8A oe 1 D 0 0 00 1 0 11 0 2 0 4 0 6 0 8 0 10 0 -VDS , Drain-Source Voltage [V] QG , Total Gate Charge [nC] 3 SFH9154 Fig 7. Breakdown Voltage vs. Temperature 12 . 20 . P-CHANNEL POWER MOSFET Fig 8. On-Resistance vs. Temperature -BVDSS , (Normalized) Drain-Source Breakdown Voltage 11 . RDS(on) , (Normalized) Drain-Source On-Resistance 16 . 10 . 12 . 09 . @Nts: oe 1 V =0V . GS 2 I = 2 0 A .D 5 -0 5 -5 2 0 2 5 5 0 7 5 10 0 15 2 10 5 15 7 08 . @Nts: oe 1 Vs=-0 .g 1V 2 I =-A .d 9 08 . -5 7 -5 7 -0 5 -5 2 0 2 5 5 0 7 5 10 0 15 2 10 5 15 7 TJ , Junction Temperature [oC] TJ , Junction Temperature [oC] Fig 9. Max. Safe Operating Area 13 0 Oeaini Ti Ae prto n hs ra i L m t d b R DS(on) s iie y Fig 10. Max. Drain Current vs. Case Temperature 2 0 -ID , Drain Current [A] -ID , Drain Current [A] 12 0 01m .s 1m s 1m 0s 1 0 1 1 5 D C @Nts: oe 1 T = 2 oC .C 5 2 T = 1 0 oC .J 5 3 Snl Ple . ige us 1 0 1 0 0 5 1 -1 0 0 1 0 11 0 12 0 0 2 5 5 0 7 5 10 0 15 2 10 5 -VDS , Drain-Source Voltage [V] Tc , Case Temperature [oC] Fig 11. Thermal Response Thermal Response 100 D=0.5 0.2 10- 1 0.1 0.05 0.02 0.01 10- 2 10- 5 10- 4 single pulse Z JC (t) , @ Notes : 1. Z J C (t) = 0.61 o C/W Max. 2. Duty Factor, D = t1 /t2 3. TJ M -TC = PD M *Z J C (t) PDM t1 t2 10- 3 10- 2 10- 1 100 101 t 1 , Square Wave Pulse Duration [sec] 4 P-CHANNEL POWER MOSFET Fig 12. Gate Charge Test Circuit & Waveform SFH9154 * Current Regulator " 50K 12V 200nF 300nF Same Type as DUT VGS Qg -10V VDS VGS DUT -3mA Qgs Qgd R1 Current Sampling (IG) Resistor R2 Current Sampling (ID) Resistor Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL Vout Vin RG DUT -10V Vout 90% t on t off tr td(off) tf VDD ( 0.5 rated VDS ) td(on) Vin 10% Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms LL VDS Vary tp to obtain required peak ID BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD tp ID VDD Time VDS (t) RG DUT -10V tp C VDD IAS BVDSS ID (t) 5 SFH9154 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms P-CHANNEL POWER MOSFET + VDS DUT -IS L Driver RG VGS Compliment of DUT (N-Channel) VGS VDD * dv/dt controlled by G * IS controlled by Duty Factor "D" VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V Body Diode Reverse Current IS ( DUT ) IRM di/dt IFM , Body Diode Forward Current Vf VDS ( DUT ) Body Diode Forward Voltage Drop Body Diode Recovery dv/dt VDD 6 |
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